@misc{An_Yu-Peng_Doped_2010,
 author={An, Yu-Peng and Wang, Yi-Ding and Cao, Feng},
 contributor={Gaj, Miron. Redakcja and Urbańczyk, Wacław. Redakcja},
 year={2010},
 rights={Wszystkie prawa zastrzeżone (Copyright)},
 description={Optica Applicata, Vol. 40, 2010, nr 1, s. 249-254},
 publisher={Oficyna Wydawnicza Politechniki Wrocławskiej},
 language={eng},
 abstract={Strong influence on impurity-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si3N4 and SiO2 as encapsulation dielectric layers. The largest intermixing occurs in the n-InP capped samples and is explained by the enhancement in out-diffusion of positive ions by the built-in electric field.},
 title={Doped cap layer effect on impurity-free vacancy enhanced disordering in InGaAs/InP quantum well structures},
 type={artykuł},
 keywords={optyka, point defects, interdiffusion, built-in electric field},
}