@misc{Rakowski_R._Metrology_2006,
 author={Rakowski, R. and Bartnik, A. and Fiedorowicz, H. and Jarocki, R. and Kostecki, J. and Krzywiński, J. and Mikołajczyk, J. and Pina, L. and Ryc, L. and Szczurek, M. and Ticha, H. and Wachulak, P.},
 contributor={Gaj, Miron. Redakcja and Wilk, Ireneusz. Redakcja},
 year={2006},
 rights={Wszystkie prawa zastrzeżone (Copyright)},
 description={Optica Applicata, Vol. 36, 2006, nr 4, s. 593-600},
 publisher={Oficyna Wydawnicza Politechniki Wrocławskiej},
 language={eng},
 abstract={In this paper an application of a recently developed laser plasma source of extreme ultraviolet (EUV) for optical measurements of optical characteristics of Mo/Si multilayer mirrors is presented. The source is based on an xenon-helium double-stream gas puff target irradiated with laser pulses from a Nd : YAG laser system (E = 0.55 J, t = 3.9 ns, f = 10 Hz, M 2 = 2.5). The results show that the source can be useful for EUV lithography technologies as a metrology tool in the semiconductor industry.},
 title={Metrology of Mo/Si multilayer mirrors at 13.5 nm with the use of a laser-produced plasma extreme ultraviolet (EUV) source based on a gas puff target},
 type={artykuł},
 keywords={optyka, laser-produced plasma extreme ultraviolet (EUV) source, gas puff target, Mo/Si mirrors, EUV spectroscopy},
}