Title:

Physical analysis of an operation of GaInAs/GaAs quantum-well vertical-cavity surface-emitting diode lasers emitting in the 1.3-μm wavelength range

Group publication title:

Optica Applicata

Creator:

Sarzała, Robert P.

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; semiconductor laser ; VCSEL ; GaInAs/GaAs QW

Description:

Optica Applicata, Vol. 35, 2005, nr 2, s. 225-240

Abstrakt:

Comprehensive three-dimensional self-consistent optical-electrical-thermal-gain physical modelling is used to simulate room-temperature continuous-wave performance characteristics of GaInAs/GaAs lasers emitting in the 1.3-μm wavelength range. The simulation takes into consideration all physical phenomena crucial for a laser operation including all important interactions between them. A real possibility to design high-performance 1.26-μm GaInAs/GaAs quantum-well vertical-cavity surface-emitting diode lasers (VCSELs) with the aid of a currently available technology is shown. Their outputs are much higher than in the case of their quantum-dot version. Methods to shift the emitting wavelength range of 1.3 μm are discussed and anticipated performance characteristics of such a 1.3-mm VCSELs are determined.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2005

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 35, 2005 ; Optica Applicata, Vol. 35, 2005, nr 2 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska