Title:

Piezoelectric effect and spontaneous polarization in computer modelling of AIII–N heterostructures

Group publication title:

Optica Applicata

Creator:

Piasecki, Tomasz ; Kośnikowski, Wojciech ; Paszkiewicz, Bogdan

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; AIII–N ; computer modelling ; heterostructure ; 2-dimensional electron gas (2DEG) ; strain ; piezoelectric effect ; spontaneous polarization ; heterostructure field effect transistor (HFET)

Description:

Optica Applicata, Vol. 35, 2005, nr 3, s. 597-604

Abstrakt:

The Ga, Al and In nitrides (AIII–N) are complete material system suitable in high power and high temperature electronic devices such as AlxGa1–xN/GaN heterostructure field effect transistor (HFET). The examples of computer modelling of AIII–N heterostructures were shown. AIII–N materials exhibit strong piezoelectric and spontaneous polarization. The computer modelling results showing the influence of layer polarity on carrier distribution in AlxGa1–xN/GaN heterostructure were shown. Only in Ga-faced heterostructures 2-dimensional electron gas (2DEG) is formed. The effect of AlxGa1–xN layer relaxation on 2DEG concentration in AlxGa1–xN/GaN heterostructure was examined. The difference in spontaneous polarization in AlxGa1–xN and GaN caused high 2DEG concentration even in AlxGa1–xN/GaN heterostructures with relaxed AlxGa1–xN layer. Polarization field in AlxGa1–xN layer in AlxGa1–xN/GaN heterostructure was enough for achieving high 2DEG concentrations in undoped heterostructure. Strained AlxGa1–xN layer was introduced into typical HFET heterostructure. GaN layer above an interlayer was depleted and the negative influence of using non semi-insulating GaN layer in HFET transistor was reduced.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2005

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 35, 2005 ; Optica Applicata, Vol. 35, 2005, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska