Advanced search ?

Object

High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers
Download

Title: High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers

Creator:

Kosiel, Kamil ; Muszalski, Jan ; Szerling, Anna ; Bugajski, Maciej

Contributor:

Gaj, Miron. Redakcja

Description:

Optica Applicata, Vol. 37, 2007, nr 4, s. 423-432

Abstrakt:

A technology of high power, continuous-wave (CW) semiconductor lasers has been elaborated. AlGaAs/InGaAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE), were used to fabricate laser diodes. The active region of laser diode was formed as strained, 8 nm thick, quantum well (QW) InGaAs layer. The AlGaAs layers of graded composition and graded refractive index (GRIN) formed the waveguide. Lasers were processed into wide stripe (W = 100 μm) mesas and were mounted on copper submounts and Peltier thermoelements in the standard TO-3 transistor housing. For stabilization of laser output, a silicon photodiode was placed next to a laser chip in the same case. Typical threshold current densities were 150 A/cm2, and the quantum efficiencies were of the order of 0.8 W/A. Lasers may work in pulsed regime as well as in CW regime with guaranteed optical power of 1 W at 300 K. The record threshold current densities achieved for 700 μm cavity were as low as 130 A/cm2 and the characteristic temperature was T0 = 200 K.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2007

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:63179

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 37, 2007 ; Optica Applicata, Vol. 37, 2007, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

Group publication title:

Optica Applicata

Subject and keywords:

optyka high power semiconductor laser graded refractive index separate confinement heterostructure (GRINSCH) threshold current external efficiency parameter T0 Auger recombination spontaneous radiative recombination nonradiative recombination

Object collections:

Last modified:

Apr 1, 2019

In our library since:

Apr 1, 2019

Number of object content hits:

187

All available object's versions:

https://dlibra.kdm.wcss.pl/publication/117040

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers Apr 1, 2019

Similar

Optica Applicata
Optica Applicata

High power AlGaAs/GaAs lasers with improved optical degradation level

Bugajski, Maciej Zbroszczyk, Mariusz Sajewicz, Paweł Muszalski, Jan Gaj, Miron. Redakcja Wilk, Ireneusz. Redakcja

2002
artykuł
Optica Applicata
Optica Applicata

Resonant cavity enhanced photonic devices

Bugajski, Maciej Muszalski, Jan Mroziewicz, Bohdan Regiński, Kazimierz Ochalski, Tomasz Gaj, Miron. Redakcja Wilk, Ireneusz. Redakcja

2001
artykuł
Optica Applicata
Optica Applicata

Reflectance study of SiO2/Si3N4 dielectric Bragg reflectors

Szerling, Anna Wawer, Dorota Hejduk, Krzysztof Piwoński, Tomasz Wójcik, Anna Mroziewicz, Bohdan Bugajski, Maciej Gaj, Miron. Redakcja Wilk, Ireneusz. Redakcja

2002
artykuł
Optica Applicata
Optica Applicata

Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy

Szerling, Anna Kosiel, Kamil Wójcik-Jedlińska, Anna Płuska, Mariusz Bugajski, Maciej Gaj, Miron. Redakcja Wilk, Ireneusz. Redakcja

2005
artykuł
Optica Applicata
Optica Applicata

Low resistance ohmic contacts to n-GaAs for application in GaAs/AlGaAs quantum cascade lasers

Karbownik, Piotr Barańska, Anna Szerling, Anna Macherzyński, Wojciech Papis, Ewa Kosiel, Kamil Bugajski, Maciej Tłaczała, Marek Jakieła, Rafał Gaj, Miron. Redakcja Urbańczyk, Wacław. Redakcja

2009
artykuł
Optica Applicata
Optica Applicata

A simple and precise method for the threshold current determination in vertical-cavity surface-emitting lasers

Pruszyńska-Karbownik, Emilia Gębski, Marcin Marciniak, Magdalena Lott, James A. Czyszanowski, Tomasz Urbańczyk, Wacław. Redakcja

2020
artykuł
Optica Applicata
Optica Applicata

Photoluminescence characterization of AlGaAs/GaAs test superlattices used for optimization of quantum cascade laser technology

Wójcik-Jedlińska, Anna Wasiak, Michał Kosiel, Kamil Bugajski, Maciej Gaj, Miron. Redakcja Urbańczyk, Wacław. Redakcja

2009
artykuł
Optica Applicata
Optica Applicata

Photoreflectance study of Al0.45Ga0.55As/GaAs superlattice: optical transitions at the miniband Γ and Π points

Motyka, Marcin Sęk, Grzegorz Janiak, Filip Ryczko, Krzysztof Misiewicz, Jan Kosiel, Kamil Bugajski, Maciej Gaj, Miron. Redakcja Urbańczyk, Wacław. Redakcja

2009
artykuł
More
×

Citation

Citation style:

Contact details

Address

Wrocław University of Science and Technology (Coordinator)
Library of Wrocław University of Science and Technology
Wybrzeże Wyspiańskiego 27
50-370 Wrocław, Poland

Phone

(+48) 71-320-38-30
(+48) 71-320-47-50

E-Mail

bc@pwr.edu.pl

Visit us!

https://biblioteka.pwr.edu.pl/

This page uses 'cookies'. More information